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hexfet power mosfet notes through are on page 2 features and benefits applications ?
absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 1.3 max. 9.9 17 84 20 25 8.0 21 8.5 v w a c 2mm x 2mm pqfn g 3 s d2 d1 4s 5d 6d top view d v ds 25 v v gs max 20 v r ds(on) max (@v gs = 10v) 13.0 m q g (typical) ( @ v gs = 4.5v) 4.3 nc i d (@t c(bottom) = 25c) 8.5 a

! form quantity IRFHS8242trpbf pqfn 2mm x 2mm tape and reel 4000 IRFHS8242tr2pbf pqfn 2mm x 2mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note features resulting benefits low r dson ( 13.0m ) lower conduction losses low thermal resistance to pcb ( 13c/w) enable better thermal dissipation low profile ( 1.0 mm) results in increased power density compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability downloaded from: http:///

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d s g repetitive rating; pulse width limited by max. junction temperature. current limited by package. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board r is measured at t j of approximately 90c. for design aid only, not subject to production testing. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 18 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 10.0 13.0 CCC 17.0 21.0 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient CCC -6.8 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 19 CCC CCC s q g total gate charge CCC 4.3 CCC nc q g total gate charge CCC 10.4 CCC v ds = 13v q gs gate-to-source charge CCC 1.8 CCC q gd gate-to-drain charge CCC 1.6 CCC r g gate resistance CCC 1.9 CCC t d(on) turn-on delay time CCC 6.5 CCC t r rise time CCC 19 CCC t d(off) turn-off delay time CCC 5.4 CCC t f fall time CCC 5.3 CCC c iss input capacitance CCC 653 CCC c oss output capacitance CCC 171 CCC c rss reverse transfer capacitance CCC 78 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 11 17 ns q rr reverse recovery charge CCC 11 17 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 25 a v gs = 4.5v, i d = 6.8a m v dd = 13v, v gs = 4.5v v gs = 4.5v, v ds = 13v, i d = 8.5a r g =1.8 v ds = 10v, i d = 8.5a v ds = 20v, v gs = 0v, t j = 125c a i d = 8.5a (see fig. 6 & 16) i d = 8.5a v gs = 0v v ds = 10v v ds = 20v, v gs = 0v t j = 25c, i f = 8.5a , v dd = 13v di/dt = 280 a/ s t j = 25c, i s = 8.5a , v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.17 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 8.5a CCC CCC 84 CCC CCC 8.5 mosfet symbol na ns a pf nc v gs = 10v v gs = 20v v gs = -20v thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 13 r jc (top) junction-to-case CCC 90 c/w r ja junction-to-ambient CCC 60 r ja junction-to-ambient (<10s) CCC 42 downloaded from: http:///

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.5a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681 01 2 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v v ds = 5.0v i d = 8.5a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.7v 60 s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60 s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.7v downloaded from: http:///
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 i d , d r a i n c u r r e n t ( a ) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wire bond -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a downloaded from: http:///
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fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 14. typical power vs. time fig 15. for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 s i n g l e p u l s e p o w e r ( w ) 0 20 40 60 80 100 i d , drain current (a) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 4.5v vgs = 10v 0 5 10 15 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.5a t j = 125c t j = 25c downloaded from: http:///
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fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 16a. gate charge test circuit fig 16b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s '( 1 ) $
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pqfn 2x2 outline package details http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 2x2 outline part marking downloaded from: http:///
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pqfn 2x2 outline tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///
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qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per jedec j-std-020d ?? ) rohs c ompliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level industrial ? (per jedec jes d47f ?? guidelines ) date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel opti on (eol notice #259) ? updated qual level from "consumer" to "industrial" on page 1, 9 ? updated data sheet with new ir corporate template revision history 12/17/2013 downloaded from: http:///

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